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1 edition of Simulation of double barrier resonant tunneling diodes found in the catalog.

Simulation of double barrier resonant tunneling diodes

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Published by Naval Postgraduate School, Available from National Technical Information Service in Monterey, Calif, Springfield, Va .
Written in English


About the Edition

The double barrier resonant tunneling diode (DBRTD) is one of several devices currently being considered by the semiconductor industry as a replacement for conventional very large scale integrated (VLSI) circuit technology when the latter reaches its currently perceived scaling limits. The DBRTD was one of the first and remains one of the most promising devices to exhibit a room temperature negative differential resistance (NDR); this non-linear device characteristic has innovative circuit applications that will enable further downsizing. Due to the expense of fabricating such devices, however, it is necessary to extensively model them prior to fabrication and testing. Two techniques for modeling these devices are discussed, the Thomas-Fermi and Poisson-Schroedinger theories. The two techniques are then compared using a model currently under development by Texas Instruments, Incorporated.

Edition Notes

Statement Roy M. Porter
The Physical Object
Pagination35 p. ;
Number of Pages35
ID Numbers
Open LibraryOL25266771M

Further, there had been some work on observing the resonant tunnelling into quantum wells in a multiple quantum well laser but without the explicit addition of a double barrier RTD. Tunnelling has been used to achieve large modulation bandwidths, 98 . Nobuya Mori. Professor, Graduate School of Engineering, Osaka University K. Taniguchi, and C. Hamaguchi, “Effects of electron–interface-phonon interaction on resonant tunneling in double-barrier heterostructures “Modeling of current distribution through metal-insulatormetal diodes with tunnel barrier roughness,” Book of. Double barrier devices We now consider a resonant device obstructed using two barriers with a well in between. The barriers have a thickness of 50A, and the well has a width of A. Comparing Figure 28 with the experimental data in the right panel of Figure 4, we see that our calculated currents are somewhat greater than the experimental.


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Simulation of double barrier resonant tunneling diodes by Roy M. Porter Download PDF EPUB FB2

A resonant-tunneling diode (RTD) is a diode with a resonant-tunneling structure in which electrons can tunnel through some resonant states at certain energy levels.

The current–voltage characteristic often exhibits negative differential resistance regions. All types of tunneling diodes make use of quantum mechanical teristic to the current–voltage relationship. In this research article, analytic model of resonant tunnelling diode (RTD) is simulated for two different structures, i.e.

single barrier (1B) RTD and double barrier (2B) RTD. A graded emitter and thin barriers were introduced in GaInAs/AlAs double-barrier resonant tunneling diodes for reductions of the transit time in the collector depletion region and the.

This book gives a comprehensive description of the physics and applications of resonant tunnelling diodes. The opening chapters of the book set out the basic principles of coherent tunnelling theory. The effects of impurity scattering, femtosecond dynamics, non-equilibrium distribution and intrinsic bistabilities are then described in detail.

Abstract. This paper describes the physical simulation of Al Ga N/GaN-based double barrier resonant tunnelling diode (RTD) with cubic-GaN structure using Silvaco ATLAS. Cubic-GaN is interesting for vertical transport devices Author: W.

Zaharim, N. Hashim, M. Packeer Mohamed, A. Manaf, M. Zawawi. @article{osti_, title = {Double Barrier Resonant Tunneling Transistor with a Fully Two Dimensional Emitter}, author = {MOON, J S and SIMMONS, JERRY A and RENO, JOHN L and BACA, WES E and BLOUNT, MARK A and HIETALA, VINCENT M and JONES, ERIC D}, abstractNote = {A novel planar resonant tunneling transistor is demonstrated.

The. The resonant tunneling mechanism of the GaN based resonant tunneling diode (RTD) with an InGaN sub-quantum-well has been investigated by means of numerical simulation. At resonant-state, Electrons in the InGaN/InAlN/GaN/InAlN RTD tunnel from the emitter region through the aligned discrete energy levels in the InGaN sub-quantum-well and GaN main.

Charge and potential profiles are self-consistently calculated in double-barrier heterostructures to derive the capacitance of resonant tunnelling devices. We show that the dipole charge integrated over the accumulation or the depletion side of the device is the result of a complex arrangement of the mobile charge dragged and drifted when a Author: P.

Mounaix, X. Wallart, J. Libberecht, D. Lippens. Quantum tunnelling or tunneling (US) is the quantum mechanical phenomenon where a subatomic particle passes through a potential m tunnelling is not predicted by the laws of classical mechanics where surmounting a potential barrier requires enough potential energy.

Quantum tunnelling plays an essential role in several physical phenomena, such as. What does RTD stand for. RTD stands for Resonant Tunneling Diodes. The double barrier resonant tunneling diode Symposium 7 August Purdue University, West Lafayette, Indiana, USA The Simulation of Resonant Tunneling Diodes.

Heating 34 Properties of Resonant Tunneling Diodes 36 A; See a random page in this book. Search powered by.

Quantum tunneling is a phenomenon in which particles penetrate a potential energy barrier with a height greater than the total energy of the particles.

The phenomenon is interesting and important because it violates the principles of classical mechanics. Quantum tunneling is important in models of the Sun and has a wide range of applications, such as the scanning tunneling.

Quantum tunneling is a phenomenon in which particles penetrate a potential energy barrier with a height greater than the total energy of the particles.

The phenomenon is interesting and important because it violates the principles of classical mechanics. Quantum tunneling is important in models of the Sun and has a wide range of applications, such as the.

This book, one of the first on the topic, discusses fundamental aspects of hot carriers in quasi-two-dimensional systems and the impact of these carriers on semiconductor devices.

The work will provide scientists and device engineers with an authoritative review of the most exciting recent developments in this rapidly moving field.

This book--one of the first on the topic--discusses fundamental aspects of hot carriers in quasi-two-dimensional systems and the impact of these carriers on semiconductor devices.

Takatsu, S. Muto, K. Imamura, and A. Shibatomi, Resonant-Tunneling Hot Electron Transistors. E.R. Brown, Resonant Tunneling in High-Speed Double Barrier Diodes. Using the energy‐dependent optical potential determined by experimental data on hot electrons, the optical model is improved to incorporate the effect of longitudinal optical‐phonon scattering that is important in GaAs/AlGaAs systems.

On the basis of this model, simulations have been made of double‐barrier resonant tunneling diodes with emitters of high and low donor Author: Yasuhito Zohta, Tetsufumi Tanamoto. This study describes the design of a resonant tunneling diode (RTD) oscillator (RTD oscillator) with a RTD-gated-graphene-2DEF (two dimensional electron fluid) and demonstrates the functioning of this RTD oscillator through a transmission line simulation model.

Impedance of the RTD oscillator changes periodically when physical dimension of the device is of considerable Cited by: 1. The word ‘resonance’ in the device name means that the tunneling-electron current occurs only when a selected energy level is matched by tuning an applied voltage bias, such as in the operation mechanism of the resonant-tunneling diode just described.

Resonant-tunneling diodes are used as super-fast : Samuel J. Ling, Jeff Sanny, William Moebs. New tunneling features in polar III-nitride resonant tunneling diodes. Physics Review X (PRX), 7, (). DOI: /PhysRevX Cornell ECE news story: "Controlling Ultra-high Speed Electron Tunneling Waves".

The development of a more accurate numerical scheme for simulating double‐barrier semiconductor structures has highlighted sensitivities of the computational results to numerical Numerical aspects on the simulation of I‐V characteristics and switching times of resonant tunneling diodes Journal of Applied Phys Cited by: The "Fifth International Conference on Simulation of Semiconductor Devices and Processes" (SISDEP 93) continues a series of conferences which was initiated in by K.

Board and D. Owen at the University College of Wales, Swansea, where it. Simulation of Semiconductor Devices and Processes: Vol.

of Crystal Growth and Photoconductivity of Graded Band Gap Semiconductors --Charge Distribution and Capacitance of Double Barrier Resonant Tunneling Diodes --Generation and Amplification of Microwave Power name\/a> \" Simulation of Semiconductor Devices and Processes.

Diodes [2] In simple terms, a diode is a device that restricts the direction of flow of charge carriers (electrons in this class) [1]. Essentially, it allows an electric current to flow in one tunneling, thus allowing amplification of signals and very simple bistable circuits.

Therefore, these types of RTDs enable resonant sharpness to be narrower compared with double-barrier RTDs (Nakagawa et al, ). As a result, large negative differential conductance is expected against small peak current density.

The triple-barrier RTD is designed to get negative differential conductance similar to double-barrier : T. Ouchi. On the way to develop a complete full-band quantum transport simulation using the Pauli Master Equation, we show our present results on ID n-i-n resistors, ID double barrier resonant tunneling diodes (DBRTD), and 2D double-gate field effect transistors (DGFETs) using a simplified parabolic, spherical effective-mass band-structure model accounting for nonpolar scattering.

Bibliography. 1 "International Technology Roadmap for Semiconductors - Edition," tech. rep., Semiconductor Industry Association, “Resonant Tunneling in Double Barrier Heterostructures”, Meeting of the Texas Section of the American Physical Society, Dallas, Texas, April “Quantum Semiconductor Devices”, Symposium on VLSI Technology, San Diego, California, May   Numerical Approximations for Polar Optical Phonon Scattering in Resonant Tunneling Diodes Single Electron Tunneling in Metallic Nanostructures at Kelvin Temperatures Optically Controlled Frequency Modulation of a Schottky Contact/Double Barrier Resonant Tunnelling Diode Oscillator.

Resonant Tunneling via 1D Quantum Confmed States. 3-D to 0-D Single Electron Tunneling Through Bound States of Donor Impurities in Resonant Tunneling Heterostructures. Resonant Tunneling through a Molecular State (Invited) Charging Effects on the Electroluminescence Spectra of Resonant Tunneling Diodes.

Coherent Tunneling Spectroscopy of 0D States. Organic opto-electronic devices including organic resonant tunneling diodes [1,2], OLEDs [3,4], organic phototransistors [5], organic photovoltaic cells [6], and organic photodetectors [7] have formed a tremendous area of research in chemistry and physics.

Electroluminescent devices based on organic materials are ofFile Size: KB. "Diffusion Barrier Cladding in Si/SiGe Resonant Interband Tunneling Diodes And Their Patterned Growth on PMOS Source/Drain Regions," Niu Jin, Sung-Yong Chung, Anthony T.

Rice, Paul R. Berger, Phillip E. Thompson, Cristian Rivas, Roger Lake, Stephen Sudirgo, Jeremy J. Kempisty, Branislav Curanovic, Sean L. Rommel, Karl D. Hirschman, Santosh K. Purchase Hot Carriers in Semiconductor Nanostructures - 1st Edition. Print Book & E-Book. ISBNM. Jahan and A. Anwar,” Study of shot noise in a double barrier resonant tunneling structure, “Proceedings IEEE/Cornell University Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, pp.August   KEYWORDS: Indium arsenide, Quantum efficiency, Doping, Gallium antimonide, Semiconductor lasers, Diodes, Terahertz radiation, Phonons, Acoustics, Heterojunctions Read Abstract + This paper will illustrate the potential of InAs/GaSb broken-gap structures for providing a solution to the well-known and long-standing terahertz (THz) frequency gap.

This program involves the design, fabrication and testing of resonant tunneling diodes with DMS layers for operation at room temperature and above. We have demonstrated, through numerical simulation that by varying the magnetic field a significant amount of frequency tuning of a DMS resonant tunneling diode, can be attained.

Devices fabricated withAuthor: Harold L Grubin. Diodes and Diode Circuits TLT Basic Analog Circuits / 8 Half - Wave Rectifier with Smoothing Capacitor Figure a Half-wave rectifier with smoothing capacitor. Figure b & c Half-wave rectifier with smoothing capacitor. Peak Inverse Voltage Peak inverse voltage (PIV) across the diode: a parameter, which defines the choice of the Size: 1MB.

A model of a double-barrier junction (DBJ) was elaborated based on the theory of planar resonant tunnel diodes and alignment of molecular states. Figure 4(a) and Figure 4(b) show the experimental setup and an energy band diagram of an ideal DBJ consisting of the vacuum gap (B1), the C 60 layer and the thin oxide (B2) under a resonant injection Author: Leonid Bolotov, Toshihiko Kanayama.

Double barrier quantum well RTD. Resonant tunnelling through double potential barriers was predicted by ().Latter, (Iogansen, ) discussed the possibility of resonant transmission of an electron through double barriers formed in semiconductor concluded that structures with identical barriers show tunnelling transmission coefficients of 1 when the particles incident Cited by: 6.

Journal of Biomimetics, Biomaterials and Biomedical Engineering Materials Science. Defect and Diffusion Forum. Bayram, Z. Vashaei, and M. Razeghi, "Reliability in room-temperature negative differential resistance characteristics of low-aluminium-content AlGaN/GaN double-barrier resonant tunneling diodes," Applied Physics Lett ().

Propagation Of A Spherical Gaussian Wave Packet Through A Double-Barrier Resonant Tunneling Structure. The Effect Of Elastic Scattering Centers On The Current Voltage Characteristics Of Double Barrier Resonant Tunneling Diodes.

Monte Carlo Simulation Of Sub-Picosecond Phenomena In Semiconductor Quantum Wells And Superlattices. The resonant tunneling diode (RTD) The double-gate metal-oxide-semiconductor field-effect transistor (DG-MOSFET) The carbon nanotube field-effect transistor (CNTFET) Conclusion.

Chapter 4. Decoherence and Transition from Quantum to Semi-classical Transport. Simple illustration of the decoherence mechanism.

A diode is a two-terminal electronic component that conducts current primarily in one direction (asymmetric conductance); it has low (ideally zero) resistance in one direction, and high (ideally infinite) resistance in the other.

A diode vacuum tube or thermionic diode is a vacuum tube with two electrodes, a heated cathode and a plate, in which electrons can flow in only one direction. V.K. Reddy, S. Javalagi, and D.P. Neikirk, "Molecular beam epitaxial growth and characterization of double barrier resonant tunneling diodes for microwave oscillator applications," 11th Annual Symposium on Electronic Materials, Processing, and Characterization, Richardson, TX.